engleski

Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon

The grazing incidence small angle X-ray scattering (GISAXS) was used to study monocrystalline silicon samples implanted with deuterium ions at energy of 24 keV and to the dose of 2E16 ions/cm2. Samples were annealed isochronally at different temperatures in the range from 100 to 700 C. Due to the relaxation of the defects structures, i.e. redistribution of vacancies and deuterium, strong particle like contribution is observed in addition to the rough surface scattering, already at 100C annealing. During the annealing, this particles (agglomerations of vacancies) a gradually dissolved till 350C annealing temperature. Another agglomeration mechanism takes over at about 500C when a different type of particle growth is observed, and these are dissolved again at about 700C. The sizes of detected particles are in 2-3nm range. Also, the interference type of scattering from a film of about 30nm thickness (the top layer, mostly unaffected by implantation)is observed. This film is gradually getting thinner with the increasing annealing temperature, due to the redistribution of the defects and the structure relaxation.

silicon ; deuterium ; ion implantation ; SAXS ; grazing incidence

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