engleski

UV light induced defects in amorphous silicon thin films

The effect of light soaking on a-Si:H films is well known as Staebler-Wronski effect, though its complete mechanism is not clear yet. We have studied the effect of light soaking with UV light on intrinsic a-Si:H films, as well as the effect of thermal annealing in the dark. It is shown that the light soaking of the films in the air did not affect hydrogen concentration from Si-H bonds and at same time oxidation of the films is observed. It means that oxygen incorporation was due to broken backbonds to Si-H which are very likely weak bonds. Moreover it is found that UV irradiation produced oxidation and caused even minor Si-H bonds breaking.

silicon; defects; oxygen; deep level transient spectroscopy; photoconductivity

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