M-center in low-energy electron irradiated 4H-SiC (CROSBI ID 312412)
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Podaci o odgovornosti
Knežević, Tihomir ; Hadžipašić, Amira ; Ohshima, Takeshi ; Makino, Takahiro ; Capan, Ivana
engleski
M-center in low-energy electron irradiated 4H-SiC
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that EH1 and EH3 are identical to M1 and M3, also recently assigned to carbon interstitial defects, and assign them to 𝐶=𝑖(ℎ) and 𝐶0 𝑖(ℎ), respectively.
defects ; silicon carbide ; irradiation ; DLTS ;
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