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Experimental Observation of Optical Amplification in Silicon Nanocrystals

We have measured optical amplification in cw laser pumped silicon nanocrystals. The silicon nanocrystals of 3.5 and 5.5 nm in mean diameter and of 0.5x10¨22 and 2.5x10¨22 cm-3 excess silicon concentration, respectively, were prepared by ion implantation in fused silica substrate followed by high temperature thermal annealing. By using variable strip length method the amplified spontanous emission spectra (A.S.E.) were measured at room temperature using different cw laser excitations wavelength. The stimulated emission was observed on the sample with larger silicon concentration, only. With red excitation the A.S.E. peak at 922 nm of 8 nm full width at half maximum, of net modal gain (g-alpha)=33 cm-1 and strong directionality properties was observed

optical amplification, silicon, nanocrystals, laser

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