Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 1158875

Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures


Pielić, Borna; Novko, Dino; Rakić, Iva Šrut; Cai, Jiaqi; Petrović, Marin; Ohmann, Robin; Vujičić, Nataša; Basletić, Mario; Busse, Carsten; Kralj, Marko
Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures // ACS Applied Materials & Interfaces, 13 (2021), 42; 50552-50563 doi:10.1021/acsami.1c15412 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 1158875 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures

Autori
Pielić, Borna ; Novko, Dino ; Rakić, Iva Šrut ; Cai, Jiaqi ; Petrović, Marin ; Ohmann, Robin ; Vujičić, Nataša ; Basletić, Mario ; Busse, Carsten ; Kralj, Marko

Izvornik
ACS Applied Materials & Interfaces (1944-8244) 13 (2021), 42; 50552-50563

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
MoS2, WS2, heterostructure, interface, graphene, Ir(111)

Sažetak
Growth of 2D materials under ultrahigh-vacuum (UHV) conditions allows for an in situ characterization of samples with direct spectroscopic insight. Heteroepitaxy of transition-metal dichalcogenides (TMDs) in UHV remains a challenge for integration of several different monolayers into new functional systems. In this work, we epitaxially grow lateral WS2–MoS2 and vertical WS2/MoS2 heterostructures on graphene. By means of scanning tunneling spectroscopy (STS), we first examined the electronic structure of monolayer MoS2, WS2, and WS2/MoS2 vertical heterostructure. Moreover, we investigate a band bending in the vicinity of the narrow one-dimensional (1D) interface of the WS2–MoS2 lateral heterostructure and mirror twin boundary (MTB) in the WS2/MoS2 vertical heterostructure. Density functional theory (DFT) is used for the calculation of the band structures, as well as for the density of states (DOS) maps at the interfaces. For the WS2–MoS2 lateral heterostructure, we confirm type-II band alignment and determine the corresponding depletion regions, charge densities, and the electric field at the interface. For the MTB, we observe a symmetric upward bend bending and relate it to the dielectric screening of graphene affecting dominantly the MoS2 layer. Quasi-freestanding heterostructures with sharp interfaces, large built-in electric field, and narrow depletion region widths are proper candidates for future designing of electronic and optoelectronic devices.

Izvorni jezik
Engleski



POVEZANOST RADA


Projekti:
EK-EFRR-KK.01.1.1.01.0001 - Potpora vrhunskim istraživanjima Centra izvrsnosti za napredne materijale i senzore (Ivanda, Mile; Jakšić, Milko; Stipčević, Mario; Kralj, Marko, EK - KK.01.1.1.01) ( POIROT)
IP-2016-06-3211 - Optička svojstva heterostruktura dihalkogenida prijelaznih metala (OhTMD) (Kralj, Marko, HRZZ - 2016-06) ( POIROT)
UIP-2017-05-3869 - Fotopobuđenja u 2D poluvodičima (PhotoExcite(2)D) (Vujičić, Nataša, HRZZ - 2017-05) ( POIROT)
UIP-2019-04-6869 - Istraživanje fononski posredovanih procesa u kvazi-dvodimenzionalnim materijalima (SyPhonAss_Q2D) (Novko, Dino, HRZZ - 2019-04) ( POIROT)

Profili:

Avatar Url Marko Kralj (autor)

Avatar Url Mario Basletić (autor)

Avatar Url Nataša Vujičić (autor)

Avatar Url Marin Petrović (autor)

Avatar Url Dino Novko (autor)

Avatar Url Borna Pielić (autor)

Poveznice na cjeloviti tekst rada:

doi pubs.acs.org

Citiraj ovu publikaciju:

Pielić, Borna; Novko, Dino; Rakić, Iva Šrut; Cai, Jiaqi; Petrović, Marin; Ohmann, Robin; Vujičić, Nataša; Basletić, Mario; Busse, Carsten; Kralj, Marko
Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures // ACS Applied Materials & Interfaces, 13 (2021), 42; 50552-50563 doi:10.1021/acsami.1c15412 (međunarodna recenzija, članak, znanstveni)
Pielić, B., Novko, D., Rakić, I., Cai, J., Petrović, M., Ohmann, R., Vujičić, N., Basletić, M., Busse, C. & Kralj, M. (2021) Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures. ACS Applied Materials & Interfaces, 13 (42), 50552-50563 doi:10.1021/acsami.1c15412.
@article{article, author = {Pieli\'{c}, Borna and Novko, Dino and Raki\'{c}, Iva \v{S}rut and Cai, Jiaqi and Petrovi\'{c}, Marin and Ohmann, Robin and Vuji\v{c}i\'{c}, Nata\v{s}a and Basleti\'{c}, Mario and Busse, Carsten and Kralj, Marko}, year = {2021}, pages = {50552-50563}, DOI = {10.1021/acsami.1c15412}, keywords = {MoS2, WS2, heterostructure, interface, graphene, Ir(111)}, journal = {ACS Applied Materials and Interfaces}, doi = {10.1021/acsami.1c15412}, volume = {13}, number = {42}, issn = {1944-8244}, title = {Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures}, keyword = {MoS2, WS2, heterostructure, interface, graphene, Ir(111)} }
@article{article, author = {Pieli\'{c}, Borna and Novko, Dino and Raki\'{c}, Iva \v{S}rut and Cai, Jiaqi and Petrovi\'{c}, Marin and Ohmann, Robin and Vuji\v{c}i\'{c}, Nata\v{s}a and Basleti\'{c}, Mario and Busse, Carsten and Kralj, Marko}, year = {2021}, pages = {50552-50563}, DOI = {10.1021/acsami.1c15412}, keywords = {MoS2, WS2, heterostructure, interface, graphene, Ir(111)}, journal = {ACS Applied Materials and Interfaces}, doi = {10.1021/acsami.1c15412}, volume = {13}, number = {42}, issn = {1944-8244}, title = {Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures}, keyword = {MoS2, WS2, heterostructure, interface, graphene, Ir(111)} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus
  • MEDLINE


Citati:





    Contrast
    Increase Font
    Decrease Font
    Dyslexic Font