Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications (CROSBI ID 710275)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Suligoj, Tomislav ; Žilak, Josip ; Osrečki, Željko ; Koričić, Marko
engleski
Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications
Integration of Horizontal Current Bipolar Transistor (HCBT) with CMOS requires fewer additional fabrication steps as compared to vertical-current bipolar devices having state-of-the-art electrical characteristics both in demonstrated implanted-base technology and in simulated SiGe-base technology. HCBT’s noise characteristics and large-signal performance for RF applications is tuned by the collector region design and the optimum device for each application is identified and characterized. High-voltage transistors are demonstrated in HCBT technology with BVCEO from 2.8 V to above 70 V enabling the integration RF and power management and other high-voltage circuits. The HCBT with SiGe base exhibits a potential of further improving the highest-performance vertical-current SiGe HBTs and overcoming their integration limitations with CMOS due to geometrical and material incompatibility.
Horizontal Current Bipolar Transistor, Lateral bipolar transistors, low noise amplifier, radio-frequency power amplifier, silicon-germanium heterojunction bipolar transistor
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Podaci o prilogu
1-4.
2021.
objavljeno
10.1109/LAEDC51812.2021.9437969
Podaci o matičnoj publikaciji
2021 IEEE Latin America Electron Devices Conference (LAEDC)
Institute of Electrical and Electronics Engineers (IEEE)
978-1-6654-1510-1
Podaci o skupu
2021 IEEE Latin America Electron Devices Conference (LAEDC 2021)
pozvano predavanje
19.04.2021-21.04.2021
Meksiko