M center in 4H-SiC is a carbon self-interstitial (CROSBI ID 297069)
Prilog u časopisu | Pismo (znanstveno) | međunarodna recenzija
Podaci o odgovornosti
Coutinho, J ; Gouveia, J.D. ; Makino, T. ; Ohshima, T. ; Pastuović, Željko ; Bakrač, Luka ; Brodar, Tomislav ; Capan, Ivana
engleski
M center in 4H-SiC is a carbon self-interstitial
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial.
Defects ; Wide band gap semiconductors ; Deep level transient spectroscopy ;
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