engleski

Neutron irradiation studies, a preliminary look for Si interstitials

We present a preliminary study of defects states occurring in n-type (110) Czochralski-grown silicon after a high (1x1016 cm-2) irradiation with fast neutrons and one hour isochronal annealing in N2 from 500 °C to 700 °C with 50 °C steps. We used Deep Level Transient Spectroscopy (DLTS) to investigate neutron irradiation induced defects, particularly self-interstitial clusters.

silicon; interstitials

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