engleski

Neutron Irradiation Induced Defects in Silicon

We present a study of defects states occurring in n-type (110) Czochralski-grown silicon after high dose (1×1016 cm-2) irradiation with fast neutrons and one hour isochronal annealing in N2 from 500 °C to 700 °C with 50 °C steps.Deep-level transient spectroscopy (DLTS) measurements were used to identify the electrical active defects. We have observed several peaks at 500 °C. Two of them with activaction energies around 0.36 eV were wider than typical for point defects. These peaks were associated with small interstitial clusters. What we have observed upon annealing at 600 °C is that defects concentration is reduced. All defects anneal out at 650 °C and than upon 700 °C very wide peak is observed. We belive that this defect is associated with {311} rod-like extended defects

silicon; neutrons; clusters

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