Structural changes in amorphous silicon at low temperatures (CROSBI ID 489425)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | domaća recenzija
Podaci o odgovornosti
Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid ; Zulim, Ivan ;
engleski
Structural changes in amorphous silicon at low temperatures
In order to stabilize characteristics of a-Si solar cells, devices are exposed to the light soaking (aging) accompanied by low temperature annealing. We used FTIR, X-ray reflectivity and SAXS analysis to monitor the structural changes occurring during the low temperature annealing of undoped a-Si:H films. FTIR results show that hydrogen is moved from positions (voids) where it was accumulated unbonded to silicon and it was trapped at dangling bonds. SAXS measurements confirmed the existence of the voids of about 2.5 nm in diameter. Hydrogen removal from the voids was confirmed by SAXS and X-ray reflectivity measurements showing that this treatment influenced their size and redistribution.
amorphous silicon; defects; SAXS; FTIR
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Podaci o prilogu
2003.
objavljeno
Podaci o matičnoj publikaciji
2nd aSiNet Workshop on Thin Silicon and 9th Euroregional Workshop on Thin Silicon Devices, Book of Abstracts
Shubert, Markus B. ; Conde, Joao P.
Lisabon: Instituto Superior Técnico
Podaci o skupu
2nd aSiNet Workshop on Thin Silicon and 9th Euroregional Workshop on Thin Silicon Devices
predavanje
19.02.2003-21.02.2003
Lisabon, Portugal
