Deep Level Defects in 4H-SiC Epitaxial Layers (CROSBI ID 698914)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Capan, Ivana ; Brodar, Tomislav ; Ohshima, Takeshi ; Sato, Shinichiro ; Makino, Takahiro ; Pastuovic, Željko ; Siegele, Rainer ; Snoj, Luka ; Radulović, Vadimir ; Coutinho, José ; Torres, Vitor J.B. ; Demmouche, Kamel
engleski
Deep Level Defects in 4H-SiC Epitaxial Layers
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first- principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively.
4H-SiC ; deep level defects ; neutrons ; ion implantation ; DLTS ; carbon vacancy
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Podaci o prilogu
225-228.
2018.
objavljeno
10.4028/www.scientific.net/msf.924.225
Podaci o matičnoj publikaciji
ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials
Trans Tech Publications
Podaci o skupu
Nepoznat skup
ostalo
29.02.1904-29.02.2096