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In situ transmission electron microscopy investigation of the decomposition of the epitaxial GeSn layers

The Ge1−xSnx alloy with x>0.01 is thermodynamically metastable and Sn tends to diffuse, segregate or precipitate as β-Sn in a droplet-like structure at temperature above ≈230°C. In situ heating experiments via transmission electron microscopy (TEM) allows us to observe and study the decomposition process of Ge1−xSnx. The main requirement for TEM investigation is an electron transparent specimen. Hence, specimen preparation is a key step towards TEM experiments. The sample preparation procedure has been developed using a combination of preparation techniques. The MBE synthesized Ge1−xSnx and reference material Si (with Ge quantum dots) have been prepared with wedge polishing technique. Further, focused ion beam (FIB) has been used to prepare a heating chip for the in situ TEM heating experiment. Various microscopy methods have been used to optimize and validate the developed sample preparation procedure.

focused ion beam / in situexperiment / MEMS chip / sample preparation/ transmission electron microscopy/ wedge polishing

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