Proximity-induced magnetization in graphene: Towards efficient spin gating (CROSBI ID 285706)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Bosnar, Mihovil ; Lončarić, Ivor ; Lazić, Predrag ; Belashchenko, Kiril D. ; Žutić, Igor
engleski
Proximity-induced magnetization in graphene: Towards efficient spin gating
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through the magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene (Gr). We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the Co/Pt/Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties.
Density Functional Theory ; Graphene ; Magnetic Proximity Effect
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Podaci o izdanju
4 (11)
2020.
114006
9
objavljeno
2475-9953
10.1103/physrevmaterials.4.114006