engleski

Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

We report on influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC. Together with the increase of the well-known carbon vacancy (VC) majority carrier related trap, neutron irradiation has introduced two deep traps, labeled as EH1 and EH3 with the activation energies for electron emission estimated as 0.4 and 0.7 eV bellow the conduction band, respectively. Based on Laplace deep level transient spectroscopy (DLTS) results, we have assigned EH1 trap to silicon vacancy (VSi). Two minority carrier traps labelled as B and D- center were detected by minority transient spectroscopy (MCTS) and assigned to substitutional boron BSi and BC, respectively. Activation energies for hole emission for B and D-center are estimated as 0.27 and 0.60 eV above the valence band, respectively. We have identified two emission lines for D-center by Laplace-MCTS measurements and assigned them to BC sitting at hexagonal (−h) and cubic (−k) lattice sites.

Silicon carbide ; defects ; boron ; minority carriers ; neutron radiation

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