Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices (CROSBI ID 695970)
Prilog sa skupa u zborniku | ostalo | međunarodna recenzija
Podaci o odgovornosti
Nanver, Lis K. ; Krakers, Max ; Knezevic, Tihomir ; Karavidas, A. ; Agarwal, Vishal ; Hueting, Ray ; Dutta, Satadal ; Boturchuk, Ievgen ; Annema, Anne-Johan
engleski
Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices
The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.
avalanche breakdown, defects, light-emitting diode (LED), Pure boron, silicon, single-photon avalanche diode (SPAD)
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Podaci o prilogu
1104306
2019.
objavljeno
10.1117/12.2501598
Podaci o matičnoj publikaciji
Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
SPIE
Podaci o skupu
Nepoznat skup
predavanje
29.02.1904-29.02.2096