Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon (CROSBI ID 695969)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Nanver, L. K. ; Liu, X. ; Knezevic, Tihomir
engleski
Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon
A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm- thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.
aluminum , atomic layer deposition , boron , chemical vapor deposition , electron injection , interface charge
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Podaci o prilogu
69-74.
2018.
objavljeno
10.1109/icmts.2018.8383767
Podaci o matičnoj publikaciji
Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS 2018)
predavanje
19.03.2018-22.03.2018
Austin (TX), Sjedinjene Američke Države