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On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies

The potential of lateral bipolar transistors, based on Horizontal Current Bipolar Transistor (HCBT), in scaled CMOS technologies are examined by TCAD simulations. Thorough and consistent simulations show that SiGe HCBT can achieve fT/fmax of 358/490 GHz outperforming standard vertical-current HBT with fT/fmax of 348/423 GHz, assuming the same intrinsic transistor doping profile. By optimizing the extrinsic base shape and width, the characteristics of SiGe HCBT can be further improved. SiGe HCBTs in bulk silicon substrates result in better performance comparing to the transistors in SOI substrates.

bipolar transistor ; Horizontal Current Bipolar Transistor (HCBT) ; SiGe ; TCAD

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