Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode (CROSBI ID 695288)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Lovro Marković ; Tihomir Knežević ; Tomislav Suligoj
engleski
Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode
In this work, different mechanisms that could cause degradation of the ideality factor in Al/Ge Schottky diodes on Si substrate are examined. Measured I-V characteristics of Schottky diodes have been fitted by the model of the diode developed in TCAD environment. The effects of Shockley-Read-Hall recombination parameters of epitaxial Ge on the I-V characteristics are simulated. The impact of interface traps on both Al/Ge and Ge/Si interfaces, as well as the effect of a buffer oxide layer on Al/Ge interface are analyzed by simulations providing a possible explanation for a degraded ideality factor in Al/Ge-on-Si Schottky diodes.
aluminum ; germanium ; Schottky barriers ; semiconductor defects ; epitaxial growth ; heterojunctions ; Ge-on-Si
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Podaci o prilogu
28-33.
2020.
objavljeno
10.23919/MIPRO48935.2020.9245134
Podaci o matičnoj publikaciji
2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)
1847-3946
Podaci o skupu
MIPRO 2020
predavanje
28.09.2020-02.10.2020
Opatija, Hrvatska