Diode design for studying material defect distributions with avalanche–mode light emission (CROSBI ID 695276)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Krakers, M. ; Knežević, T. ; Batenburg, K.M. ; Liu, X. ; Nanver, L.K.
engleski
Diode design for studying material defect distributions with avalanche–mode light emission
Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.
avalanche diode, SPAD, PureB, light emission, defects
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Podaci o prilogu
9.2
2020.
objavljeno
10.1109/icmts48187.2020.9107933
Podaci o matičnoj publikaciji
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
33rd International Conference on Microelectronic Test Structures (ICMTS)
predavanje
04.05.2020-18.05.2020
Edinburgh, Ujedinjeno Kraljevstvo
