engleski

Ion microbeams for detector characterization and materials modification with sample heating

We report about the ongoing development of the ion microprobe end-station at the Zagreb accelerator facility. Recent research interests required the possibility to heat the samples in the microprobe chamber. The heating setup that has been constructed is now able to reach 1000 °C. Customized sample holder prevents heat distribution to nearby elements or breakdown of the high vacuum operation. Up to now, two sets of experiments utilized the heating capabilities: high temperature ion implantation (irradiation) and semiconductor detector characterization. Brief overview of these experiments will be presented. The first application was ion implantation of heavy ions (F, Cl, Fe…) in diamond material at different temperatures, up to 900 °C. This localized implantation helps the exploration of the new color centers in this material. The second application was part of the extensive study of the temperature effects on charge collection properties in diamond detectors [1]. Small areas of the detector were exposed to focused proton beam irradiation to induce defects in the bulk of the material. Ion beam induced charge (IBIC) technique was used to map the electronic properties from damaged areas and pristine (unirradiated) area at elevated temperatures. The data provides insight into the temperature evolution of the radiation hardness and trapping mechanisms. The effect of the polarization phenomena was also addressed. Finally, we report the new spatial resolution results using heavy ion beams in low current mode (fA). 6 MeV Carbon beam was focused to profile with 140 nm horizontal and 220 nm vertical spot size. Further efforts in the beam resolution refinement are planned to enable new possible applications of the microprobe setup. 1. Crnjac, A. ; Skukan, N. ; Provatas, G. ; Rodriguez-Ramos, M. ; Pomorski, M. ; Jakšić, M. Electronic Properties of a Synthetic Single- Crystal Diamond Exposed to High Temperature and High Radiation. Materials, 13, 2473. doi: 10.3390/ma13112473

ion beams ; semiconductor materials modification ; IBIC

nije evidentirano