engleski

Radiation induced defect dynamics in semiconductors studied by pulsed ion beams and RBS micro-channeling

Irradiation with pulsed ion beams is used to induce defects in semiconductor materials. Point defects are created around ion tracks in the crystal lattice. Pulsed pause time allows for defects recombinations before new radiation sequence. Defect dynamics are studied by varying pulsed pause times and controlling sample temperature. Relative number of defects in irradiated areas is quantified by means of RBS channeling technique, which was performed ex- situ. During channeling, beam spot size is focused to less than 10 micrometer dimension, and beam scanning allows to locate irradiated areas with RBSc used as the microscopic position sensitive technique. Experiment results are used to interpret the effect of beam pulsing time and sample temperature on the relative number of radiation induced defects in investigated semiconductor materials.

defect dynamics ; RBS channeling ; pulsed ion beams

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