Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: Structure and photoelectric conversion efficiency (CROSBI ID 282395)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Tkalčević, Marija ; Basioli, Lovro ; Salamon, Krešimir ; Šarić, Iva ; Sancho-Parramon, Jordi ; Bubaš, Matej ; Bogdanović-Radović, Ivančica ; Bernstorff, Sigrid ; Fogarassy, Zsolt ; Balazsi, Katalin ; Petravić, Mladen ; Mičetić, Maja
engleski
Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: Structure and photoelectric conversion efficiency
Thin films comprising three dimensional germanium (Ge) quantum dot lattices formed by nitrogen (N) assisted magnetron sputtering deposition in alumina (Al2O3) matrix have been studied for light harvesting purposes. In order to expand the application of this material it is necessary to reduce germanium oxidation and to achieve stabilization of the germanium/alumina interface. Effects of tuning the N concentration, substrate temperature and Ge sputtering power during the films preparation are monitored. It is shown that the N presence not only reduces Ge oxidation during annealing but also affects the internal structure, size and arrangement of Ge quantum dots. Additionally, the deposition temperature and Ge sputtering power are used to tune the Ge quantum dot size, separation and the regularity of their positions. It is shown that the optical and electrical properties of the films, especially their photo-induced current, and quantum efficiency are strongly tunable by the deposition conditions. Moreover, a significant photo-response and effect of multiple exciton generation effect is observed. The materials presented could be used as a sensitive layer for photodetectors or photovoltaic light harvesting devices. The presented tools can be used for future fine tuning of the material to achieve the optimal quantum efficiency.
Ge QDs ; Quantum efficiency ; QD lattices ; N-assisted deposition ; Spectral response ; Multiple exciton generation
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Podaci o izdanju
218
2020.
110722
10
objavljeno
0927-0248
1879-3398
10.1016/j.solmat.2020.110722