Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source (CROSBI ID 280071)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Mironova, M. ; Metodiev, K. ; Allport, P. ; Berdalovic, I. ; Bortoletto, D. ; Buttar, C. ; Cardella, R. ; Dao, V. ; Dyndal, M. ; Freeman, P. ; Flores Sanz de Acedo, L. ; Gonella, L. ; Kugathasan, T. ; Pernegger, H. ; Piro, F. ; Plackett, R. ; Riedler, P. ; Sharma, A. ; Schioppa, E.J. ; Shipsey, I. ; Solans Sanchez, C. ; Snoeys, W. ; Wennlöf, H. ; Weatherill, D. ; Wood, D. ; Worm, S.
engleski
Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source
This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 um steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n- layer layout and front-end, and extra deep p-well and n- gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 neq/cm2. For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.
Monolithic active pixel sensors ; CMOS sensors ; Radiation-hard detectors ; Synchrotron light source ; TowerJazz ; MALTA
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Podaci o izdanju
956
2020.
163381
0
objavljeno
0168-9002
10.1016/j.nima.2019.163381
Povezanost rada
Elektrotehnika, Fizika