Preferential out-of-plane conduction and quasi-one- dimensional electronic states in layered van der Waals material 1T-TaS2 (CROSBI ID 276230)
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Martino, Edoardo ; Pisoni, Andrea ; Ćirić, Luka ; Arakcheeva, Alla ; Berger, Helmuth ; Akrap, Ana ; Putzke, Carsten ; Moll, Philip J. W. ; Batistić, Ivo ; Tutiš, Eduard ; Forró, László ; Semeniuk, Konstantin
engleski
Preferential out-of-plane conduction and quasi-one- dimensional electronic states in layered van der Waals material 1T-TaS2
Layered metallic transition-metal dichalcogenides are conventionally seen as two-dimensional conductors, despite a scarcity of systematic studies of the interlayer charge transport conducted in a well- defined geometry. Here, we reveal c-axis-oriented quasi-one-dimensional electronic states in 1T-TaS2, a layered system hosting a plethora of diverse phases, by probing its out-of-plane electrical resistivity using focused-ion-beam-tailored crystals. While the in-plane conduction appears non-metallic due to presence of a unique nanoarray of charge density wave (CDW) domains, the interlayer resistivity has a metallic temperature dependence with the anisotropy close to one, as a result of intertwining of the orbital and CDW orders. The compound is known for what was believed to be a Mott-type localisation below 150 K, yet with our data, supplemented by ab- initio calculations, we interpret the transition as a Peierls-like instability of the quasi-one-dimensional electronic structure. Our findings present a very unintuitive behaviour in a van der Waals crystal.
1T-TaS2 ; conductivity ; David star ; anisotropy
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