Napredna pretraga

Pregled bibliografske jedinice broj: 10531

Scanning ion beam microscopy : a new tool for mapping the transport properties of semiconductors and insulators


Manfredotti, C.; Fizzotti, F.; Polesello, P.; Vittone, E.; Jakšić, Milko; Bogdanović, Ivančica; Valković, V.
Scanning ion beam microscopy : a new tool for mapping the transport properties of semiconductors and insulators // Proceedings of Application of accelerators in research and industry / Duggan, J.L ; Morgan, I.L. (ur.).
Denton, USA: AIP Press, 1997. str. 705-708 (poster, nije recenziran, sažetak, znanstveni)


Naslov
Scanning ion beam microscopy : a new tool for mapping the transport properties of semiconductors and insulators

Autori
Manfredotti, C. ; Fizzotti, F. ; Polesello, P. ; Vittone, E. ; Jakšić, Milko ; Bogdanović, Ivančica ; Valković, V.

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Proceedings of Application of accelerators in research and industry / Duggan, J.L ; Morgan, I.L. - : AIP Press, 1997, 705-708

Skup
Application of accelerators in research and industry

Mjesto i datum
Denton, USA, 06-09.11.1996

Vrsta sudjelovanja
Poster

Vrsta recenzije
Nije recenziran

Ključne riječi
scanning ion beam; proton microbeams; IBIC microprobe; materials

Sažetak
Proton microbeams of energy from 3 to 5 MeV have been used to investigate cross section of Si, CdTe and CVD diamond samples by recording the charge pulses delivered at the electrodes by the single proton with a charge-sensitive electronic chain. The investigated depth varies from 50 to 140 mm depending on the proton energy and on the material. In the case of an homogeneous material (Si, CdTe), lifetime and mobility values can be obtained, together with the in-depth electrical field profiles. For polycrystalline materials, the maps of collection efficiency can be correlated with morphological maps putting in evidence a columnar-like structure due to the film growth mechanism. In these cases, it is relatively difficult to separate the effects due to the electrical field from the carrier transport properties (mobility, lifetime). Anyway, maps of collection length are quite important in order to detect the electrical inhomogeneities of polycrystalline materials.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
00980206

Ustanove
Institut "Ruđer Bošković", Zagreb

Citiraj ovu publikaciju

Manfredotti, C.; Fizzotti, F.; Polesello, P.; Vittone, E.; Jakšić, Milko; Bogdanović, Ivančica; Valković, V.
Scanning ion beam microscopy : a new tool for mapping the transport properties of semiconductors and insulators // Proceedings of Application of accelerators in research and industry / Duggan, J.L ; Morgan, I.L. (ur.).
Denton, USA: AIP Press, 1997. str. 705-708 (poster, nije recenziran, sažetak, znanstveni)
Manfredotti, C., Fizzotti, F., Polesello, P., Vittone, E., Jakšić, M., Bogdanović, I. & Valković, V. (1997) Scanning ion beam microscopy : a new tool for mapping the transport properties of semiconductors and insulators. U: Duggan, J. & Morgan, I. (ur.)Proceedings of Application of accelerators in research and industry.
@article{article, year = {1997}, pages = {705-708}, keywords = {scanning ion beam, proton microbeams, IBIC microprobe, materials}, title = {Scanning ion beam microscopy : a new tool for mapping the transport properties of semiconductors and insulators}, keyword = {scanning ion beam, proton microbeams, IBIC microprobe, materials}, publisher = {AIP Press}, publisherplace = {Denton, USA} }