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Design of Sense Amplifiers for Non-Volatile Memory

In this paper, four sense amplifiers using different architectures are designed and manufactured in 180 nm technology and compared in terms of speed, area and precision. First two amplifiers are latch-based, the third is current-sampling-based and the fourth architecture combines the current conveyor with the comparator. The results show that the minimal sensing time is equal to: 4.32 ns, 6.01 ns, 7.33 ns and 13.22 ns for the first, second, third and fourth amplifier, respectively. The achieved precision is equal to: 7.6 μA, 7.9 μA, 6.7 μA and 18.4 μA, having the areas of the circuit equal to: 156.54 μm2, 212.18 μm2, 2147.44 μm2 and 3755.65 μm2, respectively. The manufactured samples were verified experimentally.

non-volatile memory ; sense amplifiers ; integrated circuit design ; layout design ; chip measurements ; 180 nm CMOS technology

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