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Pregled bibliografske jedinice broj: 1033253

Design of Sense Amplifiers for Non-Volatile Memory


Tolić, Ivan Porin; Mikulić, Josip; Schatzberger, Gregor; Barić, Adrijan
Design of Sense Amplifiers for Non-Volatile Memory // 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Opatija, Republika Hrvatska, 2019. str. 59-64 doi:10.23919/MIPRO.2019.8757026 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 1033253 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Design of Sense Amplifiers for Non-Volatile Memory

Autori
Tolić, Ivan Porin ; Mikulić, Josip ; Schatzberger, Gregor ; Barić, Adrijan

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) / - , 2019, 59-64

Skup
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Mjesto i datum
Opatija, Republika Hrvatska, 20-24.05.2019

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
non-volatile memory ; sense amplifiers ; integrated circuit design ; layout design ; chip measurements ; 180 nm CMOS technology

Sažetak
In this paper, four sense amplifiers using different architectures are designed and manufactured in 180 nm technology and compared in terms of speed, area and precision. First two amplifiers are latch-based, the third is current-sampling-based and the fourth architecture combines the current conveyor with the comparator. The results show that the minimal sensing time is equal to: 4.32 ns, 6.01 ns, 7.33 ns and 13.22 ns for the first, second, third and fourth amplifier, respectively. The achieved precision is equal to: 7.6 μA, 7.9 μA, 6.7 μA and 18.4 μA, having the areas of the circuit equal to: 156.54 μm2, 212.18 μm2, 2147.44 μm2 and 3755.65 μm2, respectively. The manufactured samples were verified experimentally.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Josip Mikulić (autor)

Avatar Url Ivan-Porin Tolić (autor)

Avatar Url Adrijan Barić (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Tolić, Ivan Porin; Mikulić, Josip; Schatzberger, Gregor; Barić, Adrijan
Design of Sense Amplifiers for Non-Volatile Memory // 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Opatija, Republika Hrvatska, 2019. str. 59-64 doi:10.23919/MIPRO.2019.8757026 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Tolić, I., Mikulić, J., Schatzberger, G. & Barić, A. (2019) Design of Sense Amplifiers for Non-Volatile Memory. U: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) doi:10.23919/MIPRO.2019.8757026.
@article{article, author = {Toli\'{c}, Ivan Porin and Mikuli\'{c}, Josip and Schatzberger, Gregor and Bari\'{c}, Adrijan}, year = {2019}, pages = {59-64}, DOI = {10.23919/MIPRO.2019.8757026}, keywords = {non-volatile memory, sense amplifiers, integrated circuit design, layout design, chip measurements, 180 nm CMOS technology}, doi = {10.23919/MIPRO.2019.8757026}, title = {Design of Sense Amplifiers for Non-Volatile Memory}, keyword = {non-volatile memory, sense amplifiers, integrated circuit design, layout design, chip measurements, 180 nm CMOS technology}, publisherplace = {Opatija, Republika Hrvatska} }
@article{article, author = {Toli\'{c}, Ivan Porin and Mikuli\'{c}, Josip and Schatzberger, Gregor and Bari\'{c}, Adrijan}, year = {2019}, pages = {59-64}, DOI = {10.23919/MIPRO.2019.8757026}, keywords = {non-volatile memory, sense amplifiers, integrated circuit design, layout design, chip measurements, 180 nm CMOS technology}, doi = {10.23919/MIPRO.2019.8757026}, title = {Design of Sense Amplifiers for Non-Volatile Memory}, keyword = {non-volatile memory, sense amplifiers, integrated circuit design, layout design, chip measurements, 180 nm CMOS technology}, publisherplace = {Opatija, Republika Hrvatska} }

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