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Design of a scalable model of GaN devices - temperature effects and Schottky diode models (CROSBI ID 785631)
Druge vrste radova | stručna ekspertiza
Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko
Design of a scalable model of GaN devices - temperature effects and Schottky diode models // Gallium-nitride device process design kit development. 2015.
Podaci o odgovornosti
Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko
engleski
Design of a scalable model of GaN devices - temperature effects and Schottky diode models
Development of a process design kit for gallium-nitride HEMTs. Analysis of DC and RF characteristics with respect to device scaling. Added temperature effects and Schottky diode models.
GaN ; HEMT ; scalable model ; process design kit
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Podaci o izdanju
Gallium-nitride device process design kit development
2015.
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