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Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices (CROSBI ID 270472)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Nekić, Nikolina ; Šarić, Iva ; Salamon, Krešimir ; Basioli, Lovro ; Sancho- Parramon, Jordi ; Grenzer, Jörg ; Hübner, René ; Bernstorff, Sigrid ; Petravić, Mladen ; Mičetić, Maja Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices // Nanotechnology, 30 (2019), 33; 335601, 7. doi: 10.1088/1361-6528/ab1d3c

Podaci o odgovornosti

Nekić, Nikolina ; Šarić, Iva ; Salamon, Krešimir ; Basioli, Lovro ; Sancho- Parramon, Jordi ; Grenzer, Jörg ; Hübner, René ; Bernstorff, Sigrid ; Petravić, Mladen ; Mičetić, Maja

engleski

Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices

The preparation of non-oxidized Ge quantum dot (QD) lattices embedded in Al2O3, Si3N4, SiC matrices by self-assembled growth was studied. The materials were produced by magnetron sputtering deposition, using different substrate temperatures. The deposition regimes leading to the self-assembled growth type and the formation of three-dimensionally ordered Ge QD lattices in different matrices were investigated and determined. The oxidation of the Ge QDs in different matrices was monitored and the best conditions for the production of non-oxidized Ge QDs were found. The optical properties of the Ge QD lattices in different matrices show a strong dependence on the Ge oxidation and the matrix type.

Ge ; quantum dots

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Podaci o izdanju

30 (33)

2019.

335601

7

objavljeno

0957-4484

1361-6528

10.1088/1361-6528/ab1d3c

Povezanost rada

Fizika

Poveznice
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