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Reverse breakdown and light-emission patterns studied in Si PureB SPADs

The relationship between light-emission patterns from silicon avalanche-mode light- emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high- quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

Avalanche breakdown, Avalanche-mode LEDs, Defects, Light-emitting diode (LED), Optocoupler, Pure boron, Silicon, Single-photon avalanche diode (SPAD)

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