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Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology

Many imaging applications, like medical or space applications, require radiation-hard sensors. Generally, during radiation, many different defects are created, depending on the type of the radiation. With TCAD software, cross-section of a radiation-hard photodiode was simulated, and afterwards the impact of different physical parameters was simulated. Physical parameters like epitaxial layer thickness or the trap density in the bulk, play a huge role towards the responsivity of the photodiode. This paper presents a variation experiment, where relevant physical parameters are varied and analysis of the spectral responsivity and dark current of the photodiode is discussed.

Image sensor, Imaging applications, CT scanner, Ionizing radiation, Non-ionizing radiation, Radiation hardness, Radiation damage, TCAD software, Parameter variability, Screening, DoE, Spectral responsivity, Dark current

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