Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi !

Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35μm CMOS technology (CROSBI ID 681178)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Šegmanović, Filip ; Roger, Frederic ; Meinhardt, Gerald ; Jonak-Auer, Ingrid ; Suligoj, Tomislav Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35μm CMOS technology // 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). 2018. str. 18-22 doi: 10.23919/MIPRO.2018.8400003

Podaci o odgovornosti

Šegmanović, Filip ; Roger, Frederic ; Meinhardt, Gerald ; Jonak-Auer, Ingrid ; Suligoj, Tomislav

engleski

Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35μm CMOS technology

In this paper, a variability Design of Experiment (DoE) is performed on a radiation- hard photodiode structure in order to understand how the physical parameters of the device impact its spectral responsivity and dark current. The varied physical parameters describe the carrier mobility, lifetime, energy bandgap and recombination models. The electrical and optical performance of the device are simulated using TCAD software, as a function of varied physical parameters. The simulations are calibrated to the device measurements. The analysis of the design showed that the carrier lifetime is the most influencing parameter that impacts both the spectral responsivity and the dark current. Mobility parameters and Auger recombination parameters impact the spectral responsivity, while the energy bandgap at 340 K impacts the dark current. Finally, the model parameters that fit the measured dark current are obtained by the thorough variation simulations.

Image sensor, Ionizing radiation, Radiation hardness, TCAD software, Parameter variability, Screening, Design of Experiment, Spectral responsivity, Dark current

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o prilogu

18-22.

2018.

nije evidentirano

objavljeno

10.23919/MIPRO.2018.8400003

Podaci o matičnoj publikaciji

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Podaci o skupu

MIPRO 2018

predavanje

21.05.2018-25.05.2018

Opatija, Hrvatska

Povezanost rada

Elektrotehnika

Poveznice