Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion (CROSBI ID 264766)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Pivac, Branko ; Dubček, Pavo ; Dasović, Jasna ; Zorc, Hrvoje ; Bernstorff, Sigrid ; Zavašnik, Janez ; Vlahovic, Branislav Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion // Journal of nanomaterials, 2018 (2018), 9326408, 8. doi: 10.1155/2018/9326408

Podaci o odgovornosti

Pivac, Branko ; Dubček, Pavo ; Dasović, Jasna ; Zorc, Hrvoje ; Bernstorff, Sigrid ; Zavašnik, Janez ; Vlahovic, Branislav

engleski

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800 degrees C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm) spherical voids embedded in the SiO2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction) and self-organization (in horizontal direction). The formed films produce intensive photoluminescence (PL) with a peak at 500 nm. The explored dynamics of the PL decay show the existence of a very rapid process similar to the one found at Ge/SiO2 defected interface layers.

x-ray-scattering

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o izdanju

2018

2018.

9326408

8

objavljeno

1687-4110

1687-4129

10.1155/2018/9326408

Povezanost rada

Fizika

Poveznice
Indeksiranost